Samsung Electronics to Apply High NA EUV to DRAM by 2028, Expanding Cooperation with ASML

Samsung Electronics will apply "High NA Extreme Ultraviolet (EUV)," a next-generation lithography equipment, to advanced DRAM production in 2028. This marks the first time Samsung Electronics will apply High NA EUV to actual DRAM mass production.
Samsung Electronics announced on the 8th that it is expanding cooperation with the Dutch semiconductor equipment company ASML to introduce High NA EUV for advanced DRAM manufacturing by 2028.
High NA EUV is a next-generation lithography technology that can implement finer circuits by increasing the Numerical Aperture (NA) compared to existing EUV equipment. While the NA of existing EUV is 0.33, High NA EUV is 0.55. As the resolution increases, it can reduce certain processes that require multiple exposures with existing EUV, making it advantageous for miniaturization and process simplification.
Samsung Electronics plans to apply High NA EUV to advanced DRAM mass-produced products to verify process conditions, yield, and productivity. Through this, the company aims to secure the process technology required for DRAM miniaturization and accelerate the timing for the mass production application of High NA EUV.
Samsung Electronics to Apply High NA EUV to DRAM by 2028, Expanding Cooperation with ASML n.news.naver.com Samsung Electronics will apply "High NA Extreme Ultraviolet (EUV)," a next-generation lithography equipment, to advanced DRAM production in 2028. This marks the first time Samsung Electronics will apply High NA EUV to actual DRAM mass production. Samsung Electronics, Dutch semiconductor